| Autor: |
Washio, Katsuyoshi, Oda, Katsuya, Hayami, Reiko, Tanabe, Masamichi, Shimamoto, Hiromi |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Jul2001, Vol. 48 Issue 7, p1482, 6p, 4 Diagrams, 1 Chart, 10 Graphs |
| Abstrakt: |
Describes a self-aligned selective-epitaxial-growth silicon germanium heterojunction bipolar (SiGe HBT) transistor with self-aligned stacked metal/in-situ-doped polysilicon electrodes for optical fiber communication systems. SiGe HBT technology and characteristics; Circuits design. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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