| Autor: |
Rayner, Bruce, Niimi, Hiro, Johnson, Robert, Therrien, Bob, Lucovsky, Gerry, Galeener, Frank L. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2001, Vol. 550 Issue 1, p149, 5p |
| Abstrakt: |
Based on the bond-ionicity definition of Pauling, gate dielectric materials are grouped into three categories with increasing bond ionicity, continuous random networks, crn's, modified crn's with ionic components, mcrn's, and random closed packed ionic structures, rcpis's. Using this classification scheme, fully oxidized Ta[sub 2]O[sub 5] films prepared at low temperature, ∼300°C, have mcrn's, and are expected to have similar bonding arrangements and thermal stability to non-crystalline Al[sub 2]O[sub 3] and SiO[sub 2]-rich, Zr silicate alloys. This is verified by combining previously published Raman data with more recent FTIR and EXAFS results. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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