| Autor: |
Guggisberg, M., Pfeiffer, O., Schär, S., Barwich, V., Bammerlin, M., Loppacher, C., Bennewitz, R., Baratoff, A., Meyer, E. |
| Předmět: |
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| Zdroj: |
Applied Physics A: Materials Science & Processing; 2001, Vol. 72 Issue 7, pS19, 4p |
| Abstrakt: |
Abstract. Contrast inversion in nc-AFM on Si(111)7 x 7 is observed at positive sample bias. Corner holes appear as protrusions and adatoms as holes. The application of negative bias voltages causes drastic changes in the atomic constrast. Frequency shift vs distance curves show evidence of short-range, voltage-dependent forces. These observations indicate that short-range electrostatic forces are important for atomic-scale contrast in nc-AFM. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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