Probing diagonal laser transitions in InGaAs/AlInAs/InP quantum cascade lasers.

Autor: Soulby, M. R., Revin, D. G., Commin, J. P., Krysa, A. B., Roberts, J. S., Cockburn, J. W.
Předmět:
Zdroj: Journal of Applied Physics; Dec2009, Vol. 106 Issue 12, p123106-1-123106-4, 4p, 3 Graphs
Abstrakt: We report on the midinfrared broadband transmission spectroscopy measurements of a λ∼4.3 μm strain compensated In0.64Ga0.36As/Al0.58In0.42As/InP quantum cascade laser. A detailed experimental analysis of the electronic distribution for bias values below the laser threshold is presented, highlighting the effects of the design with strongly diagonal laser transition. A marked voltage induced Stark shift is observed for the diagonal laser transition while the vertical intersubband transitions involved higher energy levels remained nearly bias independent. We also demonstrate the direct observation of intersubband transitions originating from the ground level of the injector miniband to the level confined above the AlInAs barriers. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index