| Autor: |
Weimann, Nils G., Eastman, Lester F., Doppalapudi, Dharanipal, Ng, Hock M., Moustakas, Theodore D. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/1/1998, Vol. 83 Issue 7, p3656, 4p, 2 Diagrams, 1 Chart, 4 Graphs |
| Abstrakt: |
Focuses on an experiment which proposes that the model to explain the observed low transverse mobility in GaN, is the scattering of electrons at charged dislocation lines. What the photoluminescence (PL) investigations of GaN films; Information on scattering at filled traps on dislocation lines; Conclusion from experiment. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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