| Autor: |
Lee, Y. P., Kim, K. W., Rhee, J. Y., Kudryavtsev, Y. V., Nemoshkalenko, V. V., Prokhorov, V. G. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/15/2001, Vol. 89 Issue 6, p3315, 4p, 1 Chart, 3 Graphs |
| Abstrakt: |
The influence of the structural disorder on the transport properties of Co[sub 0.50]Ti[sub 0.50] alloy films in a temperature range of 4.2-300 K has been investigated without and with a magnetic field of 0.5 T. The absence of translational invariance in a disordered state leads to an increase in the resistivity and causes a change from the positive to negative temperature coefficient of resistance. This fact is explained by the partial localization of electronic states near the Fermi level. It was established that a partial structural disordering enhances the role of the electron-phonon-vibrating impurity scattering in the transport properties and also makes the spin-diffusive scattering rather noticeable. The appearance of a low-temperature resistivity minimum for the disordered Co[sub 0.50]Ti[sub 0.50] alloy film arises from the quantum corrections to the electron-electron interactions in the presence of weak localization. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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