| Autor: |
Contreras, S., Knap, W., Frayssinet, E., Sadowski, M. L., Goiran, M., Shur, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/15/2001, Vol. 89 Issue 2, p1251, 5p, 4 Graphs |
| Abstrakt: |
We report on quantum Hall effect (QHE) and Shubnikov-de-Haas (SdH) measurements for a GaN/GaAlN heterostructure in high magnetic fields (up to 35 T). The observed well defined SdH oscillations, correlated with QHE plateaus, confirm the existence of a two-dimensional electron gas at the GaN/GaAlN interface. The Shubnikov-de-Haas oscillations are superimposed on a strong positive magnetoresistance. We show that this positive magnetoresistance can be linked to a parallel conduction channel. The analysis of the high magnetic field data yields information about the carrier concentration and mobility in this channel. The concentration and mobility of two-dimensional gas and the parallel conduction layer are analyzed in a wide temperature range (1.9-77 K). A physical model (based on the band diagram and mobility calculations) explaining the origin of parallel conduction is presented. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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