| Autor: |
Storm, D. F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/2001, Vol. 89 Issue 4, p2452, 6p, 3 Charts, 4 Graphs |
| Abstrakt: |
A phenomenological model of indium and gallium incorporation in In[sub x]Ga[sub 1-x]N thin films grown by molecular beam epitaxy is presented. The group III incorporation rates are hypothesized to vary as different powers of the respective metal surface concentrations. A self-blocking process by indium, such as indium droplet formation, is easily inserted into the model in a meaningful way. A two-parameter expression for x is derived and is in excellent quantitative agreement with experimental observations. Finally, there is evidence that suggests the surface lifetime of indium adatoms varies with substrate temperature as (665 °C-T[sub s])[sup 1/2] for 600°
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| Databáze: |
Complementary Index |
| Externí odkaz: |
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