| Autor: |
Liniger, M., Kholod, Alexander N., Ménard, S., Borisenko, V. E., Bassani, F., Guirleo, G., Arnaud d'Avitaya, F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/2001, Vol. 89 Issue 11, p6281, 4p, 1 Diagram, 4 Graphs |
| Abstrakt: |
We examine theoretically charge carrier transport across a Si/CaF[sub 2] layered heterostructure by using an equivalent lumped-element circuit. We consider a structure has been precharged by a negative pulse. The resulting charge accumulation produces a nonmonotonic current-voltage (I-V) characteristic during a subsequent positive voltage sweep. We examine the dependence of the I-V characteristic on the magnitude and duration of the precharging bias pulse. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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