| Autor: |
Moon, B. K., Hironaka, K., Isobe, C., Hishikawa, S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/2001, Vol. 89 Issue 11, p6370, 8p, 1 Black and White Photograph, 2 Diagrams, 8 Graphs |
| Abstrakt: |
The fabrication of SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT) films using plasma-assisted metalorganic chemical vapor deposition (P-MOCVD) has been investigated. Optimizing the process conditions under plasma environment, amorphous SBT films were successfully deposited at a substrate temperature below 300 °C, suggesting that the P-MOCVD process effectively utilizes plasma energy to promote the reaction and decomposition of metal organic source molecules. The amorphous SBT films were crystallized to the bilayered perovskite SBT films by a postannealing at 725 °C. Thin SBT capacitors fabricated using P-MOCVD showed a good step coverage and the excellent ferroelectric properties including endurance. Low voltage operation below 1.5 V was successfully achieved using a 75 nm SBT capacitor, in which the signal level derived from the hysteresis curve suggests the feasibility of application to a 64 Mbit ferroelectric random access memories. © 2001 American Institute of Phys! ics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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