| Autor: |
Zhao, Y. W., Luo, Y. L., Fung, S., Beling, C. D., Sun, N. F., Chen, X. D., Cao, L. X., Sun, T. N., Bi, Keyun, Wu, Xiang |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/1/2001, Vol. 89 Issue 1, p86, 5p, 1 Chart, 4 Graphs |
| Abstrakt: |
Undoped and Fe-doped liquid encapsulated Czochralski (LEC) InP has been studied by Hall effect, current-voltage (I-V), and infrared absorption (IR) spectroscopy. The results indicate that a native hydrogen vacancy complex donor defect exists in as-grown LEC InP. By studying the IR results, it is found that the concentration of this donor defect in Fe-doped InP is much higher than that in undoped InP. This result is consistent with the observation that a much higher concentration of Fe[sup 2+] than the apparent net donor concentration is needed to achieve the semi-insulating (SI) property in InP. By studying the I-V and IR results of Fe-doped InP wafers sliced from different positions on an ingot, the high concentration of Fe[sup 2+] is found to correlate with the existence of this hydrogen complex. The concentration of this donor defect is high in wafers from the top of an ingot. Correspondingly, a higher concentration of Fe[sup 2+] can be detected in these wafers. These results reveal the influence of the complex defect on the compensation and uniformity of Fe-doped SI InP materials. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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