| Autor: |
Necliudov, P. V., Shur, M. S., Gundlach, D. J., Jackson, T. N. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/2000, Vol. 88 Issue 11, p6594, 4p |
| Abstrakt: |
We report on modeling of direct current (DC) characteristics of organic pentacene thin film transistors of different designs. Our model incorporates a gate-voltage dependent mobility and highly nonlinear drain and source contact series resistances. The contact nonlinearities are especially pronounced in bottom source and drain contact thin film transistors. The model successfully reproduced both below- and above-threshold characteristics of top source and drain contact and bottom source and drain contact organic pentacene thin film transistors. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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