| Autor: |
Watanabe, Yukio, Okano, Motochika |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 3/26/2001, Vol. 78 Issue 13, p1906, 3p, 1 Diagram, 4 Graphs |
| Abstrakt: |
A substantial photovoltaic effect is found in heterostructures of typical ferroelectric oxides. Pb(Ti, Zr)O[sub 3]/Nb-doped SrTiO[sub 3], especially, exhibits current-voltage characteristics of the photovoltaic effect of a typical pn junction (p: hole carrier type, n: electron carrier type). A preliminary nonoptimized device shows high performance such as open circuit voltage of 0.7-0.8 V, external conversion efficiency of 0.6%-0.8%, and response time faster than 20 μs for ultraviolet light at room temperature, suggesting the potential of this diode as a new class of photodiode. The results support the formation of a pn like junction by ferroelectric oxides. Additionally, the photovoltaic characteristics are tuned by the application of short pulse voltages and retained. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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