| Autor: |
Litovchenko, V. G., Korbutyak, D. V., Bercha, A. I., Kryuchenko, Yu. V., Krylyuk, S. G., Grahn, H. T., Hey, R., Ploog, K. H. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/25/2001, Vol. 78 Issue 26, p4085, 3p, 4 Graphs |
| Abstrakt: |
Nonsymmetric short-period GaAs/AlAs superlattices, for which the well thickness is at least a factor of 2 larger than the barrier thickness, have been shown to exhibit a direct band gap for any well thickness. These superlattices are characterized by an enhanced intensity of the luminescence as compared to their symmetric indirect-gap counterparts with the same well width, and, thus, may be used as light-emitting devices, in particular, as low-threshold lasers in the red visible spectrum. This conjecture is supported by the observation of stimulated emission at T=80 K for a GaAs/AlAs superlattice with six monolayers well and three monolayers barrier width. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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