| Autor: |
Huang, Yin-Chieh, Liang, Jian-Chin, Sun, Chi-Kuang, Abare, Amber, DenBaars, Steven P. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/12/2001, Vol. 78 Issue 7, p928, 3p, 4 Graphs |
| Abstrakt: |
Lateral diffusion behavior of two-dimensional carrier gas in InGaN/GaN multiple quantum wells was investigated using optical transient transmission measurements. A large ambipolar diffusion coefficient was observed, which was attributed to the enhancement by a strong piezoelectric field. This large ambipolar diffusion coefficient was found to increase with increased well width with a value on the order of 3000 cm2/s for a 62 Å well-width sample. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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