| Autor: |
Su, Xiaotao, Kalia, Rajiv K., Nakano, Aiichiro, Vashishta, Priya, Madhukar, Anupam |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/4/2001, Vol. 78 Issue 23, p3717, 3p, 3 Diagrams, 1 Graph |
| Abstrakt: |
Large-scale molecular dynamics simulations are performed to investigate the mechanical stresses in InAs/GaAs nanomesas with {101}-type sidewalls. The in-plane lattice constant of InAs layers parallel to the InAs/GaAs(001) interface starts to exceed the InAs bulk value at the twelfth monolayer (ML) and the hydrostatic stresses in InAs layers become tensile above ∼12 ML. As a result, it is not favorable to have InAs overlayers thicker than 12 ML. This may explain the experimental findings of the growth of flat InAs overlayers with self-limiting thickness of ∼11 ML on GaAs nanomesas. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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