Ferromagnetic Resonance Study of Ga1− xMn xAs Fabricated on (311) GaAs Wafers by Mn Ion Implantation and Pulsed-Laser Melting.

Autor:	Zhou, Y. Y., Liu, X., Furdyna, J. K., Scarpulla, M. A., Dubon, O. D.
Předmět:	FERROMAGNETIC resonance GALLIUM ARSENIC MANGANESE SEMICONDUCTOR wafers ION implantation ANISOTROPY MAGNETIC properties
Zdroj:	Journal of Superconductivity & Novel Magnetism; Jan2010, Vol. 23 Issue 1, p87-90, 4p, 2 Diagrams, 2 Graphs
Abstrakt:	We present a ferromagnetic resonance (FMR) study of Ga1− xMn xAs fabricated by Mn ion implantation (II) into (311) GaAs wafers followed by pulsed-laser melting (PLM). We measured the angular dependence of FMR at 4 K, and the data were then fitted by Stoner–Wohlfarth model to obtain the cubic and uniaxial anisotropy parameters. The observed angular behavior of FMR can be understood in terms of two contributions: a cubic anisotropy field parallel to the 〈001〉 axes, and a uniaxial anisotropy field parallel to the [311] direction. Our results show that the magnetic anisotropy fields in II-PLM (Ga,Mn)As are fundamentally similar to those in Ga1− xMn xAs samples grown by molecular beam epitaxy (MBE), indicating that the two different growth methods lead to materials with very similar magnetic properties. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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