| Autor: |
Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Barlage, D. W., Udwary, K., Preble, E. A., Evans, K. R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Dec2009, Vol. 106 Issue 11, p113104-113108, 4p, 1 Diagram, 4 Graphs |
| Abstrakt: |
InGaN/GaN quantum wells (QWs) grown with identical conditions on m-plane and c-plane GaN substrates were studied by cathodoluminescence spectroscopy. At a low current of 10 nA, the emission intensity and wavelength of the m-plane aligned QWs were found to be about two times stronger and 19.5 nm blueshifted with respect to that of the c-plane aligned QWs. An increase in the current over three orders of magnitude was found to result in an increase in the emission intensities, with faster saturation in the m-plane aligned QWs. This was explained by the screening of quantum-confined Stark effect in the emission efficiency of the c-plane aligned QWs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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