| Autor: |
Tek Po Lee, Rinus, Tian-Yi Koh, Alvin, Kian-Ming Tan, Tsung-Yang Liow, Dong Zhi Chi, Yee-Chia Yeo |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Nov2009, Vol. 56 Issue 11, p2770-2777, 8p, 1 Black and White Photograph, 2 Diagrams, 8 Graphs |
| Abstrakt: |
We clarify the role of carbon and dysprosium in nickel-dysprosium-silicide (Ni[Dy]Si:C) contacts formed on silicon:carbon (Si1-yCy or Si:C) for Schottky-barrier height (SBH) reduction. Carbon-induced energy bandgap Eg narrowing and the segregation of dysprosium (Dy) at the Ni[Dy]Si:C/Si:C interface were shown to be responsible for SBH reduction in this paper. First, we show that electron barrier height (ΦBN) reduction of up to 69 meV (or 10.3%) for NiSi can be achieved with the scaling of substitutional carbon Csub concentration from 0% to 1.0%. Second, new evidence revealing the segregation of Dy-based interlayer at the Ni[Dy]Si:C/Si:C interface and an additional 321 meV (or 53%) reduction in ΦBN for NiSi:C are presented. This could be due to charge transfer at the Ni[Dy]Si:C/Si:C interface. The successful modulation of ΦBN for Ni[Dy]S:C translates to an effective 41% reduction in device REXT, resulting in improved drive current performance. This opens new avenues to optimize the Si1-yCy contact interface for extending transistor performance in future technological generations. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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