| Autor: |
Chumakov, Dmytro, Lindert, Frank, Lehr, Matthias U., Grillberger, Michael, Zschech, Ehrenfried |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Semiconductor Manufacturing; Nov2009, Vol. 22 Issue 4, p592-595, 4p, 2 Black and White Photographs, 2 Charts, 2 Graphs |
| Abstrakt: |
Dual cantilever beam (DCB) mechanical testing is applied to two kinds of chips, manufactured in the 45 nm technology node. Both chips consist of different numbers of ultra low-k (ULK) dielectric layers, however, they have similarly designed crack-stop structures. It is shown that in all cases, cohesive cracking occurred in the upper ULK layers. The crack-stops hamper the crack propagation, and cracks are deflected outside the interconnect stack. The paths of the deflected crack fronts are FIB-sectioned and imaged in SEM. The increasing number of ULK layers leads to decrease in effective Gc of the stack. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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