| Autor: |
Kadoya, Y., Yoshida, T., Noge, H., Sakaki, H. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 1/1/1998, Vol. 83 Issue 1, p567, 10p, 16 Black and White Photographs, 2 Diagrams, 2 Charts, 9 Graphs |
| Abstrakt: |
Analyzes the etching of GaAs by HCI gas with emphasis on the quality of the heterointerfaces formed by the direct overgrowth of A1GaAs on the etched GaAs surfaces in an ultrahigh vacuum processing system. Details on the sample preparation procedures; Description of the properties of the interfaces. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
