The Fermi level of annealed low-temperatue GaAs on Si-...-doped GaAs grown by molecular beam...
| Autor: | Lee, W.C., Hsu, T.M., Wang, S. C., Chang, M. N., Chyi, J.-I. |
|---|---|
| Předmět: | |
| Zdroj: | Journal of Applied Physics; 1/1/1998, Vol. 83 Issue 1, p486, 5p, 1 Diagram, 1 Chart, 4 Graphs |
| Abstrakt: | Studies the Fermi level of annealed low-temperature GaAs on Si-...doped GaAs grown by molecular beam epitaxy. Experimental procedure used; Results and discussion of the study. |
| Databáze: | Complementary Index |
| Externí odkaz: |
|