Low-frequency noise in single electron tunneling transistor.
| Autor: | Tavkhelidze, A.N., Mygind, J. |
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| Zdroj: | Journal of Applied Physics; 1/1/1998, Vol. 83 Issue 1, p310, 8p, 11 Graphs |
| Abstrakt: | Investigates the noise in current biased aluminium single electron tunneling (SET) transistors, in the frequency range of 5 mHz |
| Databáze: | Complementary Index |
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