Self-organized Ge clustering on partially Ga-terminated Si(iii) surfaces.

Autor: Maruno, S., Fujita, S., Watanabe, H., Kusumi, Y., Ichikawa, M.
Předmět:
Zdroj: Journal of Applied Physics; 1/1/1998, Vol. 83 Issue 1, p205, 7p, 16 Black and White Photographs, 2 Graphs
Abstrakt: Features a demonstration on the occurence of spatially controlled self-organization in Ge clustering, on partially Ga-terminated Si(111) surfaces with Ga-adsorbed and Ga-desorbed striped areas on them. Information on Ge growth on Si(111) surfaces; Effects of the differences in growth.
Databáze: Complementary Index