Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods.

Autor:	Jiang, Xiang-Wei, Deng, Hui-Xiong, Li, Shu-Shen, Luo, Jun-Wei, Wang, Lin-Wang
Předmět:	METAL oxide semiconductor field-effect transistors PSEUDOPOTENTIAL method CHARGE density waves QUANTUM theory MATHEMATICAL physics EIGENFUNCTIONS
Zdroj:	Journal of Applied Physics; Oct2009, Vol. 106 Issue 8, p084510-1-084510-9, 9p, 2 Diagrams, 6 Graphs
Abstrakt:	The atomistic pseudopotential quantum mechanical calculations are used to study the transport in million atom nanosized metal-oxide-semiconductor field-effect transistors. In the charge self-consistent calculation, the quantum mechanical eigenstates of closed systems instead of scattering states of open systems are calculated. The question of how to use these eigenstates to simulate a nonequilibrium system, and how to calculate the electric currents, is addressed. Two methods to occupy the electron eigenstates to yield the charge density in a nonequilibrium condition are tested and compared. One is a partition method and another is a quasi-Fermi level method. Two methods are also used to evaluate the current: one uses the ballistic and tunneling current approximation, another uses the drift-diffusion method. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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