| Autor: |
Jiang, Q., Zhang, Z. Y., Childs, D. T. D., Hogg, R. A. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; Oct2009, Vol. 106 Issue 7, p073102-1-073102-6, 6p, 1 Diagram, 1 Chart, 7 Graphs |
| Abstrakt: |
The effect of modulation p-doping on the characteristics of 1.2 μm quantum dot lasers is reported. Compared to undoped devices, p-doped are shown to exhibit higher saturated gain, higher internal efficiency, improved T0, lower excited state lasing current densities, and higher internal loss. Both types of the device are analyzed with regard to high power applications in the extreme cases of complete and nonexistent gain clamping. Results from a laser optimized to have minimal threshold current are discussed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
