| Autor: |
Achanta, Ravi S., Gill, William N., Plawsky, Joel L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Oct2009, Vol. 106 Issue 7, p074906-074911, 5p, 1 Diagram, 2 Graphs |
| Abstrakt: |
Our previous drift/diffusion model describing the effect of the transport and accumulation of copper ions on the time to failure of dielectrics was extended here to include metallic barriers and the effect of an elastic drift term. The results of the model were compared with experimental data on the time to failure of SiO2 dielectrics that included Ru(P) and TaN barriers. Excellent agreement was found, and the success of the Ru(P) compared to the TaN barrier was attributed to the former’s lower copper ion solubility and diffusivity. There is a change in the value of the field acceleration parameter (γ) with barriers that leads to an increase in the projected lifetime. We link this change in γ to a number of factors including the transport of oxidizing species through the barrier responsible for copper ion formation, and the injection and motion of electrons and holes, which are altered in the presence of a barrier between the metal and dielectric. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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