| Autor: |
Zuo, Qingyun, Long, Shibing, Liu, Qi, Zhang, Sen, Wang, Qin, Li, Yingtao, Wang, Yan, Liu, Ming |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Oct2009, Vol. 106 Issue 7, p073724-073729, 5p, 1 Diagram, 6 Graphs |
| Abstrakt: |
The ZrO2 films with Au nanocrystals embedded (ZrO2:nc-Au) are fabricated by e-beam evaporation, and the self-rectifying effect in the Au/ZrO2:nc-Au/n+ Si sandwich structure is investigated. Self-rectifying resistive switching characteristics are obtained when the resistive memory is switched to low-resistance state (LRS). It is found that the Schottky contact at the Au/ZrO2 interface limits charge injection under reverse bias, while under forward bias the current is limited by space charge, resulting in a rectification of 7×102 under ±0.5 V at LRS, which enables the resistive memory to alleviate the cross-talk effect without additional switching elements in crossbar structure arrays. This self-rectifying resistive switching is believed to occur at a localized region and explained by a proposed model. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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