| Autor: |
Miloszewski, Jacek M., Wartak, M. S., Weetman, P., Hess, O. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Sep2009, Vol. 106 Issue 6, p063102-1-063102-5, 5p, 2 Charts, 8 Graphs |
| Abstrakt: |
We performed an extensive numerical study of the linewidth enhancement factor (α-parameter) in single and multiple-quantum-well structures built from In0.38Ga0.62 As1-yNy/GaAs material systems. A ten-band kp Hamiltonian matrix was used in the calculations and solved self-consistently with Poisson’s equation. The linewidth enhancement factor was evaluated as a function of wavelength, nitrogen composition, well width, and carrier density and shows significant dependence on those parameters. The simulated results are in good agreement with published experimental data for a single quantum well. We demonstrate that engineering the desired linewidth enhancement factor is possible by varying the aforementioned parameters. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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