| Autor: |
Steiner, M. A., Bhusal, L., Geisz, J. F., Norman, A. G., Romero, M. J., Olavarria, W. J., Zhang, Y., Mascarenhas, A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Sep2009, Vol. 106 Issue 6, p063525-1-063525-5, 5p, 1 Black and White Photograph, 5 Graphs |
| Abstrakt: |
We have fabricated a series of GaxIn1-xP samples over the compositional range 0.51<0.76 on GaAs substrates. The samples were prepared by first growing a thick step-graded layer of GaAs1-yPy to bridge the lattice misfit between the GaxIn1-xP layers and the GaAs substrate. The order parameter was tuned using a dilute antimony surfactant during growth. The composition, strain, and order parameter of each sample were characterized by x-ray diffraction, and the bandgap was measured by photoluminescence. We find good agreement between the experimentally measured bandgaps and theoretically modeled curves. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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