| Autor: |
Moresco, Michele, Bertazzi, Francesco, Bellotti, Enrico |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Sep2009, Vol. 106 Issue 6, p063719-1-063719-9, 9p, 2 Charts, 7 Graphs |
| Abstrakt: |
The coming to age of GaN-based ultraviolet avalanche photodiodes (APDs) has made them increasingly preferred over PIN photodetectors in several areas spanning from communication to defense systems, and from commercial to scientific applications. In this work, which is the second article of a two-part series, we study the physics and performance of GaN APDs using the full-band Monte Carlo (FBMC) model described in Part I. The proposed FBMC model is based on a realistic electronic structure obtained by pseudopotential calculations and a phonon dispersion relation determined by ab initio techniques. We determine the key performance figures such as the carrier multiplication gain and the breakdown voltage for several GaN APD structures that have been fabricated by a number of experimental groups. The calculated electron and hole multiplication gains as a function of the applied bias, as well as the breakdown voltage, are found to be in good agreement with the experimental data available. Based on the FBMC results we also propose an efficient recurrence equation model, which provides a first-order estimate of the multiplication gain without resorting to the full fledge microscopic approach. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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