| Autor: |
Ahn, Joon-Hyung, McIntyre, Paul C., Mirkarimi, Laura Wills, Gilbert, Stephen R., Amano, Jun, Schulberg, Michelle |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/28/2000, Vol. 77 Issue 9 |
| Abstrakt: |
Electrical degradation of (Ba, Sr)TiO[sub 3] (BST) thin films was investigated by annealing Pt/BST/Pt structures in D[sub 2]/N[sub 2] and D[sub 2]O-containing furnace ambients. Deuterium depth profiles were correlated to the current-voltage characteristics of the BST thin films. The dependence of the D distribution and leakage current density on the D incorporation method indicates that mobile, donor-type deuterium defects dissolve in large concentrations within BST thin films, and that their effects on leakage properties depend on the nature of their charge compensation. A mechanism is proposed for the leakage current increase after D[sub 2]/N[sub 2] anneals, and good quantitative agreement between the theoretical results and experimental data is demonstrated. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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