| Autor: |
Ko, Hyun-Chul, Hyun-Chul Ko, Nakamura, Takahiro, Koui, Tomoaki, Suzuki, Naofumi, Shiba, Kazuhiro, Kobayashi, Kenichi |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 9/25/2000, Vol. 77 Issue 13 |
| Abstrakt: |
A laser diode structure, consisting of a 1.3 μm all selective metalorganic vapor phase epitaxy grown buried-heterostructure (ASM-BH) laser diode with a selectively oxidized-AlInAs current-confinement layer, is proposed and demonstrated. As the lateral oxidization is automatically stopped near the active layer by self-aligned AlInAs, a narrow current aperture with excellent controllability is realized. The fabricated laser diode shows low continuous-wave threshold current of 2.5 and 7.5 mA at 25 and 85 °C, respectively, for 250-μm-long devices with HR(75%)/HR(95%) coatings. The maximum operating temperature is higher than 145 °C. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
