| Autor: |
Royea, William J., Juang, Agnes, Lewis, Nathan S. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/25/2000, Vol. 77 Issue 13 |
| Abstrakt: |
A two-step, chlorination/alkylation procedure has been used to convert the surface Si-H bonds on NH[sub 4]F[sub (aq)]-etched (111)-oriented Si wafers into Si-alkyl bonds of the form Si-C[sub n]H[sub 2n+1] (n>=1). The electrical properties of such functionalized surfaces were investigated under high-level and low-level injection conditions using a contactless rf apparatus. The charge carrier recombination velocities of the alkylated surfaces were <25 cm s[sup -1] under high-level and low-level injection conditions, implying residual surface trap densities of <3x10[sup 9] cm[sup -2]. Although the carrier recombination velocity of hydrogen-terminated Si(111) surfaces in contact with aqueous acids is <20 cm s[sup -1], this surface deteriorates within 30 min in an air ambient, yielding a high surface recombination velocity. In contrast, methylated Si(111) surfaces exhibit low surface recombination velocities in air for more than 4 weeks. Low surface recombination velocities were also observed for Si surfaces that had been modified with longer alkyl chains. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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