| Autor: |
Preschilla A., Nisha, Nisha Preschilla A., Major, S., Kumar, Nigvendra, Samajdar, I., Srinivasa, R. S., Srinivasa, R.S. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/18/2000, Vol. 77 Issue 12, 6 Black and White Photographs, 6 Graphs |
| Abstrakt: |
Nanocrystalline gallium nitride (GaN) thin films were deposited on quartz substrates by reactive rf sputtering of GaAs target with nitrogen as the reactive cum sputtering gas. X-ray diffraction and transmission electron microscopy confirmed the presence of GaN crystallites with particle size increasing from 3 to 16 nm, as the substrate temperature was increased from 400 to 550 °C. The particle size in films grown at temperatures below 550 °C were less than the exciton Bohr radius of GaN. The band gap of these films obtained from absorption and photoluminescence measurements showed a blueshift with respect to bulk GaN. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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