| Autor: |
Matsushita, Shigeharu, Harada, Mitsuaki, Gueshi, Tatsuro, Matsushita, Yoshifumi |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/13/2000, Vol. 77 Issue 20 |
| Abstrakt: |
IrSiN films (including IrSi film) formed by the reactive co-sputtering of Ir and Si targets have been investigated with regard to their oxygen-diffusion barriers in an application to stacked ferroelectric capacitors. The film properties and barrier effect were examined with relation to the N[sub 2]/(Ar+N[sub 2]) deposition flow ratio. In IrSiN films formed with a N[sub 2]/(Ar+N[sub 2]) flow ratio of 0.06 or 0.12, a shallow oxygen penetration depth of less than 20 nm was attained even under annealing in O[sub 2] at 800 °C for 40 min, and no reaction was observed with polycrystalline silicon (poly-Si) films. These films also adhered well to both poly-Si and SiO[sub 2] films. Therefore, the barriers are likely to prove extremely useful for integrated ferroelectric capacitors. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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