| Autor: |
Lim, Phyllis S. Y., Lee, Rinus T. P., Sinha, Mantavya, Chi, Dong Zhi, Yeo, Yee-Chia |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Aug2009, Vol. 106 Issue 4, p043703-1-043703-5, 5p, 2 Diagrams, 7 Graphs |
| Abstrakt: |
The effective electron Schottky barrier height ([uppercase_phi_synonym]BN) of nickel silicide (NiSi:C) formed on silicon-carbon (Si1-yCy or Si:C) films with different substitutional carbon concentrations Csub was investigated. [uppercase_phi_synonym]BN was observed to decrease substantially with an increase in Csub. When Csub is increased from 0% to 1.5%, [uppercase_phi_synonym]BN is reduced by 200 meV. The results of this work could be useful for the reduction in contact resistance between nickel silicide and silicon-carbon source and drain in strained n-channel metal-oxide-semiconductor field-effect transistors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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