| Autor: |
Ho, Johnny C., Ford, Alexandra C., Yu-Lun Chueh, Leu, Paul W., Ergen, Onur, Takei, Kuniharu, Smith, Gregory, Majhi, Prashant, Bennett, Joseph, Javey, Ali |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 8/17/2009, Vol. 95 Issue 7, p072108, 3p, 1 Diagram, 3 Graphs |
| Abstrakt: |
One of the challenges for the nanoscale device fabrication of III-V semiconductors is controllable postdeposition doping techniques to create ultrashallow junctions. Here, we demonstrate nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach. From transmission electron microscopy and secondary ion mass spectrometry, a dopant profile abruptness of ∼3.5 nm/decade is observed without significant defect density. The n+/p+ junctions fabricated by using this doping scheme exhibit negative differential resistance characteristics, further demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of ∼8×1018 cm-3. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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