| Autor: |
Shi, S., Schmerber, G., Arabski, J., Beaufrand, J.-B., Kim, D. J., Boukari, S., Bowen, M., Kemp, N. T., Viart, N., Rogez, G., Beaurepaire, E., Aubriet, H., Petersen, J., Becker, C., Ruch, D. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/27/2009, Vol. 95 Issue 4, p043303, 3p, 1 Diagram, 4 Graphs |
| Abstrakt: |
We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)2(NCS)2 (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5×10-6 cm2/V s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminum organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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