Vacuum field emission from a Si-TaSi[sub 2] semiconductor-metal eutectic composite.

Autor: Kirkpatrick, D.A., Bergeron, G.L., Czarnaski, M.A., Hickman, J.J., Levinson, M., Nguyen, Q.V., Ditchek, B.M.
Předmět:
Zdroj: Applied Physics Letters; 10/21/1991, Vol. 59 Issue 17, p2094, 3p, 2 Black and White Photographs, 1 Chart
Abstrakt: Measures the vacuum field emission of a Si-TaSi[sub 2] eutectic composite wafers. Incorporation of TaSi[sub 2] fibers into the silicon matrix; Growth of epitxial layers on the cathode backplane; Correlation between current densities and diam active area.
Databáze: Complementary Index