| Autor: |
Gailhanou, M., Labourie, C., Lievin, J.L., Perales, A., Lambert, M., Poingt, F., Sigogne, D. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/25/1991, Vol. 58 Issue 8, p796, 3p, 3 Diagrams, 1 Graph |
| Abstrakt: |
Demonstrates chemical beam epitaxy to be a suitable technique for the planarization of etched structures by elective overgrowth of indium phosphide layers. Fabrication of planar buried heterostructure laser diodes; Separate confinement multiquantum well active layer; Threshold current. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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