| Autor: |
Arias, J.M., Pasko, J.G., Zandian, M., Shin, S.H., Williams, G.M., Bubulac, L.O., DeWames, R.E., Tennant, W.E. |
| Předmět: |
|
| Zdroj: |
Applied Physics Letters; 3/1/1993, Vol. 62 Issue 9, p976, 3p, 1 Diagram, 4 Graphs |
| Abstrakt: |
Examines the fabrication of planar p-on-n HgCdTe heterostructure photodiodes. Growth of materials by molecular beam epitaxy; Formation of planar junctions by selective pocket diffusion of arsenic ions; Analysis on the current-voltage characteristics of the photodetectors. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
