| Autor: |
Arnot, H.E.G., Glew, R.W., Schiavini, G., Rigby, L.J., Piccirillo, A. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 6/14/1993, Vol. 62 Issue 24, p3189, 3p, 4 Graphs |
| Abstrakt: |
Investigates the selective etching of indium phosphide and indium gallium arsenic phosphide over aluminum indium arsenide (AlInAs) using methane/hydrogen gas reactive ion etching. Use of AlInAs as an etch stop layer; Application of the fluorine free mixture; Analysis of the etch-stop behavior of AlInAs. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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