Effect of interface layer on the microstructure and electromigration resistance of AL-Si-Cu....

Autor: Olowolafe, J.O., Kawasaki, H., Lee, C.C., Klein, J., Pintchovski, F., Jawarani, D.
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Zdroj: Applied Physics Letters; 5/10/1993, Vol. 62 Issue 19, p2443, 3p, 1 Diagram, 1 Chart, 4 Graphs
Abstrakt: Examines the effects of interface layer on the microstructure and electromigration resistance of aluminum-silicon-copper alloy. Sputter deposition of the alloy on ion-sputtered substrates; Analysis of TiN and Al microstructure; Link between electromigration median time to fail and Al intensities.
Databáze: Complementary Index