| Autor: |
Cotta, M.A., Hamm, R.A., Staley, T.W., Yadvish, R.D., Harriott, L.R., Temkin, H. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/1/1993, Vol. 62 Issue 5, p496, 3p, 1 Chart, 4 Graphs |
| Abstrakt: |
Examines the edge growth rate enhancement of indium phosphide and lattice matched indium gallium arsenide layers grown on silica-masked InP substrate. Growth of the sample by metalorganic molecular beam epitaxy; Use of scanning force microscopy; Dependence of the migration length on metalorganic and hydride flows. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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