| Autor: |
Smith, G.W., Pidduck, A.J., Whitehouse, C.R., Glasper, J.L., Keir, A.M., Pickering, C. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 12/16/1991, Vol. 59 Issue 25, p3282, 3p, 5 Graphs |
| Abstrakt: |
Presents the surface topography changes during the growth of GaAs by molecular beam epitaxy. Observation of the laser light scattering (LLS) features using atomic force microscopy (AFM); Application of in situ LLS and ex situ AFM; Mechanisms leading to surface roughening during epitaxial growth. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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