| Autor: |
Maeda, Keiji, Ikoma, Hideaki, Sato, Kenji, Ishida, Toshiki |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 5/17/1993, Vol. 62 Issue 20, p2560, 3p, 2 Diagrams, 2 Graphs |
| Abstrakt: |
Examines the density distribution of interface states in GaAs Schottky barrier from nonideal I-V characteristics by the interfacial layer model. Increase of the ideality factor with increasing forward bias voltage; Observation of the fermi level of interface states shifts; Magnitude of the density states. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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