Photoluminescence, Raman scattering, and infrared absorption studies of porous silicon.

Autor: Seo, Y.H., Lee, H.-J., Jeon, H.I., Oh, D.H., Nahm, K.S., Lee, Y.H., Suh, E.-K., Lee, H.J., Kwang, Y.G.
Předmět:
Zdroj: Applied Physics Letters; 4/12/1993, Vol. 62 Issue 15, p1812, 3p, 14 Graphs
Abstrakt: Examines the photoluminescence, Raman scattering, and infrared absorption in porous silicon. Revelation of crystalline or intermediate phases; Relation of hydrogen and oxygen atomic configuration to the light emitting characteristics of the silicon layers; Effect of thermal oxidation on trichloroethylene.
Databáze: Complementary Index