Thermal decomposition of triethylgallium on variously reconstructed GaAs (111)B surfaces.

Autor: Ohki, Y., Hiratani, Y., Sasaki, M.
Předmět:
Zdroj: Applied Physics Letters; 11/11/1991, Vol. 59 Issue 20, p2538, 3p, 3 Black and White Photographs, 3 Diagrams, 1 Chart
Abstrakt: Explores the thermal decomposition of triethylgallium on variously reconstructed gallium arsenide (111)B surface. Measurement of reconstructed surfaces at 420 degree Celsius; Change of signal intensities for the gallium containing species; Effect of larger arsenic coverage.
Databáze: Complementary Index