Wafer temperature measurements and end-point detection during plasma etching by thermal imaging.

Autor: Patel, V., Patel, M., Ayyagari, S., Kosonocky, W.F., Misra, D., Singh, B.
Předmět:
Zdroj: Applied Physics Letters; 9/9/1991, Vol. 59 Issue 11, p1299, 3p, 1 Diagram, 3 Graphs
Abstrakt: Examines the use of thermal imaging for end-point detection during plasma etching of polycrystalline silicon layers. Uses of thermal imaging; Determination of the heat-transfer coefficient of the thermal contact between silicon wafer and water-cooled electrode.
Databáze: Complementary Index